Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review
In: IEEE Journal of the Electron Devices Society, Jg. 10 (2022), S. 720-727
Online
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Zugriff:
Complementary metal-oxide-semiconductor (CMOS) image sensors have widely been used in internet of thinking (IoT) devices such as smartphones, smart watch and personal computer tablets [1] . The consumer market strongly requires higher sensitivity and higher speed image data processing to realize high functional CMOS image sensors such as three dimensionally stacked back-side-illuminated CMOS image sensors (3D-CIS) [2] . However, there are some serious technological issues in the fabrication of advanced CMOS image sensors as shown in Fig. 1 .
Titel: |
Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review
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Autor/in / Beteiligte Person: | Okuda, Hidehiko ; Kobayashi, Koji ; Kadono, Takeshi ; Okuyama, Ryosuke ; Koga, Yoshihiro ; Hirose, Ryo ; Onaka-Masada, Ayumi ; Shigematsu, Satoshi ; Suzuki, Akihiko ; Kurita, Kazunari |
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Zeitschrift: | IEEE Journal of the Electron Devices Society, Jg. 10 (2022), S. 720-727 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2022 |
Medientyp: | unknown |
ISSN: | 2168-6734 (print) |
DOI: | 10.1109/jeds.2021.3135656 |
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