High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region (MIPS-P)
In: IEICE Electronics Express, Jg. 2 (2005), S. 578-582
Online
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Zugriff:
Advanced photonic networks require high-speed switching in nano-second order switching time, low power consumption and low crosstalk, etc. For these purposes we proposed a semiconductor multi-mode interference photonic switch with partial index-modulation regions (MIPS-P) which can operate by current injection for refractive index change and is expected as a high-speed optical switch. In this letter we have experimentally confirmed small-current and low-crosstalk operation by using InAlGaAs/InAlAs, which is effective for injected carrier confinement. And also high-speed switching operation in a switching time of about 1.5ns has been demonstrated, for the first time, at a repetition rate of 10MHz.
| Titel: |
High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region (MIPS-P)
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| Autor/in / Beteiligte Person: | Ishikawa, Tomohiro ; Okazaki, Atsuki ; Utaka, Katsuyuki ; Amanai, Hidetaka ; Shimoyama, Kenji ; Kumai, Shingo ; Kurihara, Kaori |
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| Zeitschrift: | IEICE Electronics Express, Jg. 2 (2005), S. 578-582 |
| Veröffentlichung: | Institute of Electronics, Information and Communications Engineers (IEICE), 2005 |
| Medientyp: | unknown |
| ISSN: | 1349-2543 (print) |
| DOI: | 10.1587/elex.2.578 |
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