A Link between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations
In: IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (11), pp.4479-4485. ⟨10.1109/TED.2017.2750910⟩ IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4479-4485. ⟨10.1109/TED.2017.2750910⟩; (2017)
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Zugriff:
International audience; In this paper, we investigate the link between various resistive memory (RRAM) electrical characteristics: endurance, window margin (WM), and retention. For this purpose, several RRAMs are characterized using various resistive layers and bottom electrodes. By focusing on one technology and optimizing programming conditions (current, voltage, and time), we establish a tradeoff between endurance and WM. Then, by changing memory stack, we demonstrate the correlation between endurance plus window marging improvement and retention degradation. Studying this last feature from a material point of view, we analyze different oxides by density functional theory. We realize a systematic review for possible exchanges of species between resistive layer and Cu-based top electrode and study their diffusion. This provides insights on conductive filament composition in different stacks. Combining previous experiments and simulations, we propose a link between memory characteristics and material microscopic parameters, through the ion energy migration barrier. Finally, we extract how endurance, WM, and retention are correlated to material properties and electrical parameters in order to choose the suitable material for a defined application using the RRAM technology.
| Titel: |
A Link between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations
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| Autor/in / Beteiligte Person: | Nail, Cecile ; Berthier, Remy ; Bernard, Mathieu ; Ghibaudo, Gerard ; Perniola, Luca ; Vallée, Christophe ; Sklenard, Benoit ; Blaise, Philippe ; Molas, Gabriel ; Laboratoire des technologies de la microélectronique (LTM ) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) ; Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) ; Direction de Recherche Technologique (CEA) (DRT (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) ; Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ) ; Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]) ; Laboratoire des technologies de la microélectronique (LTM) ; Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'Énergie Atomique et aux Énergies Alternatives (CEA) - Grenoble-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA) ; Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA) ; Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA) |
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| Quelle: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2017, 64 (11), pp.4479-4485. ⟨10.1109/TED.2017.2750910⟩ IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4479-4485. ⟨10.1109/TED.2017.2750910⟩; (2017) |
| Veröffentlichung: | HAL CCSD, 2017 |
| Medientyp: | unknown |
| ISSN: | 0018-9383 (print) |
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