Modeling of dislocations in a CDW junction: interference of the CDW and the normal carriers

We derive and study equations for dissipative transient processes in a constraint incommensurate charge density wave (CDW) with remnant pockets or a thermal population of normal carriers. The attention was paid to give the correct conservation of condensed and normal electrons, which was problematic at presence of moving dislocation cores if working within an intuitive Ginzburg-Landau like model. We performed a numeric modelling for stationary and transient states in a rectangular geometry when the voltage V or the normal current are applied across the conducting chains. We observe creation of an array of electronic vortices, the dislocations, at or close to the junction surface; their number increases stepwise with increasing V. The dislocation core strongly concentrates the normal carriers but the CDW phase distortions almost neutralize the total charge. At other regimes, the lines of the zero CDW amplitude flash across the sample working as phase slips. The studies were inspired by, and can be applied to experiments on mesa-junctions in NbSe3 and TaS3 (Yu.I. Latyshev et al in proceedings of ECRYS 2008 and 2011).

Comment: "Special Issue on the International Workshop on Electronic Crystals (ECRYS-2014)", Physica B (2015)