Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors †
In: Sensors (Basel, Switzerland), Jg. 19 (2019-12-01), Heft 24
Online
unknown
Zugriff:
In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.
Titel: |
Random Telegraph Noises from the Source Follower, the Photodiode Dark Current, and the Gate-Induced Sense Node Leakage in CMOS Image Sensors †
|
---|---|
Autor/in / Beteiligte Person: | Wu, Meng-Hsu ; Chou, Kuo-Yu ; Paillet, Philippe ; Goiffon, Vincent ; Chin, Yin ; Chih-Lin, Lee ; Tu, Honyih ; Calvin Yi-Ping Chao ; Yeh, Shang-Fu |
Link: | |
Zeitschrift: | Sensors (Basel, Switzerland), Jg. 19 (2019-12-01), Heft 24 |
Veröffentlichung: | MDPI, 2019 |
Medientyp: | unknown |
ISSN: | 1424-8220 (print) |
Schlagwort: |
|
Sonstiges: |
|