Accurate Transistor Modeling by Three-Parameter Pad Model for Millimeter-Wave CMOS Circuit Design
In: IEEE Transactions on Microwave Theory and Techniques, Jg. 64 (2016-06-01), S. 1736-1744
Online
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Zugriff:
This paper proposes accurate CMOS device de-embedding and modeling methods. For millimeter-wave circuit design, accurate simulation models are required. For this reason, an accurate measurement is a key technique for device characterization, and de-embedding and modeling methods are also very important. In this work, a three-parameter pad model based on L-2L de-embedding method and a transistor model with frequency and bias dependency are proposed. The pad model is derived from the assumption that the capacitance of PADs becomes constant at high frequencies. In the transistor modeling, parasitic elements are extracted mathematically. A five-stage low-noise amplifier is fabricated by 65–nm CMOS technology to confirm the accuracy of simulation, and the simulation and measurement results match well with each other.
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Accurate Transistor Modeling by Three-Parameter Pad Model for Millimeter-Wave CMOS Circuit Design
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Autor/in / Beteiligte Person: | Kawai, Seitaro ; Sato, Shinji ; Maki, Shotaro ; Tokgoz, Korkut ; Kaan ; Tokgoz, Korkut Kaan ; Okada, Kenichi ; Matsuzawa, Akira |
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Zeitschrift: | IEEE Transactions on Microwave Theory and Techniques, Jg. 64 (2016-06-01), S. 1736-1744 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers (IEEE), 2016 |
Medientyp: | unknown |
ISSN: | 1557-9670 (print) ; 0018-9480 (print) |
DOI: | 10.1109/tmtt.2016.2549527 |
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