Solution-Processed Organic and Oxide Hybrid CMOS Inverter for Low Cost Electronic Circuits
In: Journal of Nanoscience and Nanotechnology, Jg. 20 (2020-07-01), S. 4381-4384
Online
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Zugriff:
We demonstrated an organic and oxide hybrid CMOS inverter with the solution-processed semiconductor and source/drain electrodes. For the solution-processed n- and p-type semiconductor, InGaZnO solution and TIPS-pentacene/PαMS blend were spin-coated respectively while Silver ink and PEDOT:PSS solution were drop-casted with the help of the bank to serve as source/drain electrodes. The InGaZnO and the TIPS-pentacene transistors show typical n- and p-type transistor operations with low off-current. Based on the combination of the solution-processed n- and p-type transistors, full-swing characteristic curve with low static current of the hybrid CMOS were obtained.
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Solution-Processed Organic and Oxide Hybrid CMOS Inverter for Low Cost Electronic Circuits
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Autor/in / Beteiligte Person: | Cho, Jae-Hyeok ; Kyeong Min Yu ; Kim, Min-Hoi ; Amos Amoako Boampong ; Lee, Sang-Hoon ; Seo, Min-Jae |
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Zeitschrift: | Journal of Nanoscience and Nanotechnology, Jg. 20 (2020-07-01), S. 4381-4384 |
Veröffentlichung: | American Scientific Publishers, 2020 |
Medientyp: | unknown |
ISSN: | 1533-4880 (print) |
DOI: | 10.1166/jnn.2020.17600 |
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