Three‐stage GaN‐on‐SiC medium‐power LNA exploiting a current‐reuse architecture
In: International Journal of RF and Microwave Computer-Aided Engineering, Jg. 28 (2018-05-16)
Online
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Zugriff:
A recently presented implementation of the current-reuse concept, specifically devised for microwave cascaded single-ended amplifiers, is applied to the design of a three-stage medium-power low-noise amplifier (LNA) operating in X-band. The LNA is realized on a GaN-on-SiC 0.25 mm technology supplied by Leonardo S.p.A.’s internal foundry and achieves a transducer gain (G T )of 24 dB, a noise figure(NF) better than 2.5 dB and an output power at 1 dB gain compression (P out,1dB ) higher than 20 dBm over the whole X-band. The first two stages of the LNA are stacked and share the same current while requiring, as a pair, a doubled external supply voltage, which corresponds to that of the third, medium-power stage. The versatility of the adopted current-reuse concept is exemplified by the fact that the two low-noise stages are initially designed in a conventional single-ended topology: only in a second step are they converted into a current-sharing stage pair with no significant effect on RF performance. Nonconventional approaches to low-noise design and small-signal stability analysis developed by the Authors and adopted in this design are referred to the Reader.
Titel: |
Three‐stage GaN‐on‐SiC medium‐power LNA exploiting a current‐reuse architecture
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Autor/in / Beteiligte Person: | Colangeli, Sergio ; Ciccognani, Walter ; Limiti, Ernesto ; Vittori, M. |
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Zeitschrift: | International Journal of RF and Microwave Computer-Aided Engineering, Jg. 28 (2018-05-16) |
Veröffentlichung: | Hindawi Limited, 2018 |
Medientyp: | unknown |
ISSN: | 1099-047X (print) ; 1096-4290 (print) |
DOI: | 10.1002/mmce.21423 |
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