Temperature dependence of oriented growth of Pb[Yb1/2Nb1/2]O3–PbTiO3 thin films deposited on LNO/Si substrates
In: Thin Solid Films, Jg. 517 (2008-11-01), S. 695-698
Online
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Zugriff:
(1-x)Pb[Yb(1/2)Nb(1/2)]O(3)-xPbTiO(3) (PYbN-PT, x=0.5)(001) oriented thin films were deposited onto LaNiO3 (LNO)/Si(001) substrates by sol-gel processing. The crystallographic texture of the films was controlled by the annealing temperature and heating rate. Highly (001) oriented LNO thin films were prepared by a simple metal organic decomposition technique, and the samples were annealed at 700 °C and 750 °C using a rapid thermal annealing process and furnace, respectively. X-ray diffraction analysis revealed that the films of PYbN-PT were highly (001) oriented along LNO/Si substrates. The degree of PYbN-PT orientation is dependent on the heating rate and annealing temperature. Annealing heating rate of 10 °C/s and high annealing temperature near 750 °C produce the greatest degree of (001) orientation, which gives rise to improved dielectric properties.
Titel: |
Temperature dependence of oriented growth of Pb[Yb1/2Nb1/2]O3–PbTiO3 thin films deposited on LNO/Si substrates
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Autor/in / Beteiligte Person: | Zhou, Qifa ; Zhang, Q.Q. ; Shung, K.K. ; Djuth, F.T. |
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Zeitschrift: | Thin Solid Films, Jg. 517 (2008-11-01), S. 695-698 |
Veröffentlichung: | Elsevier BV, 2008 |
Medientyp: | unknown |
ISSN: | 0040-6090 (print) |
DOI: | 10.1016/j.tsf.2008.08.004 |
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