Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects
In: Sensors, Jg. 17 (2017-11-01), Heft 12
Online
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Zugriff:
Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable increase. A theoretical method of dark signal distribution pre- and post-radiation is used to analyze the degradation mechanisms of the dark signal distribution. The theoretical results are in good agreement with experimental results. This research would provide a good understanding of the proton radiation effects on the CIS and make it possible to predict the dark signal distribution of the CIS under the complex proton radiation environments.
Titel: |
Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects
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Autor/in / Beteiligte Person: | Wang, Zujun ; Xue, Yuanyuan ; He, Baoping ; Liu, Minbo ; Dong, Guantao ; Ma, Wuying ; Chen, Wei ; Jin, Junshan ; Sheng, Jiangkun ; Yao, Zhibin |
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Zeitschrift: | Sensors, Jg. 17 (2017-11-01), Heft 12 |
Veröffentlichung: | MDPI AG, 2017 |
Medientyp: | unknown |
ISSN: | 1424-8220 (print) |
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