Pure sulfide wide gap CIGS on silicon for tandem applications by exploring versatile coevaporation of metallic films and sulfur annealing
In: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), Jun 2021, Fort Lauderdale, United States. pp.2079-2083, ⟨10.1109/PVSC43889.2021.9518966⟩; (2021-06-20)
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International audience; Cu(In,Ga)(S,Se)(2) (CIGS) is a good candidate for tandem solar cell applications, thanks to its bandgap which can be tuned by changing the ratios In/Ga and Se/S. In particular, widegap CIGS is well suited to be implemented into tandem solar cells with silicon bottom cells, the CIGS acting as the top semi-transparent solar cell. Pure sulfide 1.55 eV CIGS already reached efficiencies of 16,9 % via a two-step route consisting of the deposition of metals followed by a reactive sulfur annealing [1], and a 14.2% efficient solar cell was recently reported by Barreau et al, for a bandgap of 1.6 eV based on co-evaporation [2]. In this work, we report on the investigation of two step CIGS deposition on silicon for tandem application. The CIGS absorber is deposited via a sequential method, where Cu, In and Ga are deposited by versatile co-evaporation process, followed by an annealing at 600 degrees C in presence of sulfur powder. Optimization of deposition and annealing conditions led to the formation of a dense and adherent CIGS film on silicon. EDX mapping analysis show the formation of a two-layer structure which is suitable for high efficiency cells [2] with overall Cu(In+Ga) (CGI) of 1,0. XRD and PL analysis confirm the formation of qualitative wide gap CIGS material. This work shows the suitability of using this coevaporation method for exploring the synthesis of wide-gap pure sulfide CIGS on silicon. A further investigation on the addition of selenium during the evaporation process shows the possibility to tune the gallium grading in the final CIGSu(Se) layer.
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Pure sulfide wide gap CIGS on silicon for tandem applications by exploring versatile coevaporation of metallic films and sulfur annealing
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Autor/in / Beteiligte Person: | Barreau, Nicolas ; Lontchi, Jackson ; Cammilleri, Davide ; Rebai, Amelle ; Crossay, Alexandre ; Lincot, Daniel ; Gloaguen, Hugo ; Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF) ; École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP) ; Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social] ; Université de Nantes (UN) ; Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF) ; Institut des Matériaux Jean Rouxel (IMN) ; Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST) ; Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN) ; Université de Nantes (UN)-Université de Nantes (UN) ; Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP) ; EDF R&D (EDF R&D) ; EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP) ; Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC) ; ANR-20-CE05-0038,EPCIS,Cellules Tandem Epitaxiales à Haut Rendement CIGS-Silicium(2020) |
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Quelle: | 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), Jun 2021, Fort Lauderdale, United States. pp.2079-2083, ⟨10.1109/PVSC43889.2021.9518966⟩; (2021-06-20) |
Veröffentlichung: | HAL CCSD, 2021 |
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