Large-Scale Conformal Growth of Atomic-Thick MoS2 for Highly Efficient Photocurrent Generation
2018
Online
report
Controlling the interconnection of neighboring seeds (nanoflakes) to full coverage of the textured substrate is the main challenge for the large-scale conformal growth of atomic-thick transition metal dichalcogenides by chemical vapor deposition. Herein, we report on a controllable method for the conformal growth of monolayer MoS2 on not only planar but also micro- and nano-rugged SiO2/Si substrates via metal-organic chemical vapor deposition. The continuity of monolayer MoS2 on the rugged surface is evidenced by scanning electron microscopy, cross-section high-resolution transmission electron microscopy, photoluminescence (PL) mapping, and Raman mapping. Interestingly, the photo-responsivity (~254.5 mA/W) of as-grown MoS2 on the nano-rugged substrate exhibits 59 times higher than that of the planar sample (4.3 mA/W) under a small applied bias of 0.1 V. This value is record high when compared with all previous MoS2-based photocurrent generation under low or zero bias. Such a large enhancement in the photo-responsivity arises from a large active area for light-matter interaction and local strain for PL quenching, where the latter effect is the key factor and unique in the conformally grown monolayer on the nano-rugged surface. The result is a step toward the batch fabrication of modern atomic-thick optoelectronic devices.
Comment: 25 pages, 5 figures
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Large-Scale Conformal Growth of Atomic-Thick MoS2 for Highly Efficient Photocurrent Generation
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Autor/in / Beteiligte Person: | Nguyen, Tri Khoa ; Nguyen, Anh Duc ; Le, Chinh Tam ; Ullah, Farman ; Koo, Kyo-in ; Kim, Eunah ; Kim, Dong-Wook ; Jang, Joon I. ; Kim, Yong Soo |
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Veröffentlichung: | 2018 |
Medientyp: | report |
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