High-fidelity $CCR_Z(\phi)$ gates via RF-induced F\'{o}rster resonances
2023
Online
report
Registers of trapped neutral atoms, excited to Rydberg states to induce strong long-distance interactions, are extensively studied for direct applications in quantum computing. In this regard, new effective approaches to the creation of multiqubit quantum gates arise high interest. Here, we present a novel gate implementation technique based on RF-induced few-body F\"{o}rster resonances. External radio frequency (RF) control field allows us to manipulate the phase and population dynamics of many-atom system, thus enabling the realization of universal $CCR_{Z}(\phi)$ quantum gates. We numerically demonstrate RF-induced resonant interactions, as well as high-precision three-qubit gates. The extreme controllability of interactions provided by RF makes it possible to implement gates for a wide range of parameters of the atomic system, and significantly facilitates their experimental implementation. For the considered error sources, we achieve theoretical gate fidelities compatible with error correction ($\sim 99.7\%$) using reasonable experimental parameters.
Comment: 6 pages, 3 figures, 1 table
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High-fidelity $CCR_Z(\phi)$ gates via RF-induced F\'{o}rster resonances
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Autor/in / Beteiligte Person: | Ashkarin, I. N. ; Lepoutre, S. ; Pillet, P. ; Beterov, I. I. ; Ryabtsev, I. I. ; Cheinet, P. |
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Veröffentlichung: | 2023 |
Medientyp: | report |
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