Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio
2024
Online
report
Topological crystalline insulators (TCIs) are interesting for their topological surface states, which hold great promise for scattering-free transport channels and fault-tolerant quantum computing. A promising TCI is SnTe. However, Sn-vacancies form in SnTe, causing a high hole density, hindering topological transport from the surface being measured. This issue could be relieved by using nanowires with a high surface-to-volume ratio. Furthermore, SnTe can be alloyed with Pb reducing the Sn-vacancies while maintaining its topological phase. Here we present the catalyst-free growth of monocrystalline PbSnTe in molecular beam epitaxy (MBE). By the addition of a pre-deposition stage before the growth, we have control over the nucleation phase and thereby increase the nanowire yield. This facilitates tuning the nanowire aspect ratio by a factor of four by varying the growth parameters. These results allow us to grow specific morphologies for future transport experiments to probe the topological surface states in a Pb1-xSnxTe-based platform.
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Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio
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Autor/in / Beteiligte Person: | Mientjes, Mathijs G. C. ; Guan, Xin ; Lueb, Pim J. H. ; Verheijen, Marcel A. ; Bakkers, Erik P. A. M. |
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Veröffentlichung: | 2024 |
Medientyp: | report |
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