Application of Quantox Measurements to Identify Phosphorus Contamination in Silicon Wafers
In: Gate Dielectric Integrity: Material, Process, and Tool Qualification, Jg. 2000 (2000), Heft 1382, S. 91-101
academicJournal
Zugriff:
Titel: |
Application of Quantox Measurements to Identify Phosphorus Contamination in Silicon Wafers
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Autor/in / Beteiligte Person: | Dexter, MA ; Hasslinger, KM ; Fritz, JR ; Ullo, CA ; Gupta, DC ; Brown, GA |
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Zeitschrift: | Gate Dielectric Integrity: Material, Process, and Tool Qualification, Jg. 2000 (2000), Heft 1382, S. 91-101 |
Veröffentlichung: | 2000 |
Medientyp: | academicJournal |
ISBN: | 0-8031-2615-8 (print) ; 0-8031-5431-3 (print) ; 978-0-8031-2615-2 (print) ; 978-0-8031-5431-5 (print) |
DOI: | 10.1520/STP13486S |
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