Design and electrical characterization of TMBS diodes and diamond MOSFETs for power microelectronics ; Conception et caractérisations électriques de diodes de type TMBS et de transistors de type MOSFET en diamant pour la microélectronique de puissance
In: https://theses.hal.science/tel-03709314 ; Energie électrique. Université de Lyon, 2022. Français. ⟨NNT : 2022LYSEI010⟩, 2022
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Hochschulschrift
Zugriff:
The increase of the world electrical consumption requires the improvement of power devices. Until now, most of these devices, mainly made of Silicon, have reached a saturation point in terms of compromise between voltage holding capability and on-state resistance. Thus, the promising intrinsic physical properties of wide bandgap semiconductors (SiC, GaN, Diamond) open the way to the realization of more efficient power electronic components. In this context, our work focuses on the design and realization of a vertical TMBS (Trench MOS Barrier Schottky) diode and a vertical P-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a diamond U-gate that can withstand 6000 V and 1200 V respectively at room temperature. These two structures have been designed in the framework of the ANR project MOVeToDIAM (MOS Vertical Tout DIAMant), coordinated by LAAS-CNRS, in the continuity of the work on diamond carried out in the laboratory since 2005. The design of the TMBS diode and the MOSFET transistor is realized with the SENTAURUS TCAD (Technology Computer Aided Design) software. A design methodology is adapted for these two structures to achieve the desired operating criteria. Finally, essential technological bricks have been developed to realize the TMBS diode and the MOSFET transistor. First, ohmic contacts on P-type diamond samples have been realized, then electrically characterized using the right TLM (Transmission Line Method) patterns. Then, a RIE-ICP (Reactive Ion Etching - Inductive Coupled Plasma) dry etching process was developed to obtain the realization of the MESA structure of the TMBS diode and also for the opening of the U-gate of the MOSFET. Finally, a deposition of different dielectrics (SiO2, Si3N4 and Al2O3) on diamond samples has been performed in order to evaluate the quality of the dielectric deposition. ; L’augmentation de la consommation électrique mondiale nécessite l’amélioration des composants de puissance. Jusqu’à présent, la majorité de ces composants, principalement réalisés ...
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Design and electrical characterization of TMBS diodes and diamond MOSFETs for power microelectronics ; Conception et caractérisations électriques de diodes de type TMBS et de transistors de type MOSFET en diamant pour la microélectronique de puissance
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Autor/in / Beteiligte Person: | Makhoul, Ralph ; (AMPERE), Ampère ; École Centrale de Lyon (ECL) ; Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL) ; Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon) ; Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE) ; Ampère, Département Energie Electrique (EE) ; Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL) ; Université de Lyon ; Planson, Dominique ; Luong Viêt Phung |
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Zeitschrift: | https://theses.hal.science/tel-03709314 ; Energie électrique. Université de Lyon, 2022. Français. ⟨NNT : 2022LYSEI010⟩, 2022 |
Veröffentlichung: | HAL CCSD, 2022 |
Medientyp: | Hochschulschrift |
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