A highly EMI-immune folded cascode OpAmp in 0.18 μm CMOS technology
In: IEEE International Symposium on Electromagnetic Compatibility, 2016-November, 546-551 (2016); 2016 International Symposium on Electromagnetic Compatibility, EMC EUROPE, 2016
Konferenz
Zugriff:
peer reviewed ; This paper describes a folded cascode CMOS instrumentation amplifier input stage, which has an increased immunity to electromagnetic interference (EMI). The proposed structure uses a source-buffered concept with a replica circuit to achieve a higher EMI immunity over a wide range of frequencies, from 10 MHz to 1 GHz. Circuit simulations illustrate how the proposed folded cascode amplifier reduces susceptibility to EMI even in the presence of large amplitude interferences. Simulation results show that the maximum EMI-induced output offset voltage for the proposed folded cascode amplifier is less than 8 mV over a wide range of frequencies (10 MHz to 1 GHz), when a 3.3 Vpp EMI signal is injected into the non-inverting input; when the amplifier is connected in a voltage-follower configuration. In contrast, the classic folded cascode amplifier generates a maximum input offset voltage of 700 mV at 1 GHz under the same operating conditions. © 2016 IEEE.
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A highly EMI-immune folded cascode OpAmp in 0.18 μm CMOS technology
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Autor/in / Beteiligte Person: | Boyapati, S. ; Redouté, Jean-Michel ; Baghini, M. S. |
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Zeitschrift: | IEEE International Symposium on Electromagnetic Compatibility, 2016-November, 546-551 (2016); 2016 International Symposium on Electromagnetic Compatibility, EMC EUROPE, 2016 |
Veröffentlichung: | Institute of Electrical and Electronics Engineers Inc., 2016 |
Medientyp: | Konferenz |
ISSN: | 1077-4076 (print) |
DOI: | 10.1109/EMCEurope.2016.7739256 |
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