CMOS compatible manufacturing of a hybrid SET-FET circuit
In: ISSN: 0268-1242, 2022
Online
academicJournal
Zugriff:
International audience ; This study analyzes feasibility of complementary metal-oxide-semiconductor (CMOS)-compatible manufacturing of a hybrid single electron transistor-field effect transistor (SET-FET) circuit. The fundamental element towards an operating SET at room temperature is a vertical nanopillar (NP) with embedded Si nanodot generated by ion-beam irradiation. The integration process from NPs to contacted SETs is validated by structural characterization. Then, the monolithic fabrication of planar FETs integrated with vertical SETs is presented, and its compatibility with standard CMOS technology is demonstrated. The work includes process optimization, pillar integrity validation, electrical characterization and simulations taking into account parasitic effects. The FET fabrication process is adapted to meet the requirements of the prefabricated NPs. Overall, this work establishes the groundwork for the realization of a hybrid SET-FET circuit operating at room temperature.
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CMOS compatible manufacturing of a hybrid SET-FET circuit
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| Autor/in / Beteiligte Person: | del Moral, Alberto ; Amat, Esteve ; Engelmann, H-J ; Pourteau, M-L ; Rademaker, Guido ; Quirion, David ; Torres-Herrero, N ; Rommel, Mathias ; Heinig, K-H ; von Borany, Johannes ; Tiron, Raluca ; Bausells, Joan ; Perez-Murano, Francesc ; Instituto de Microelectrònica de Barcelona (IMB-CNM) ; Consejo Superior de Investigaciones Cientificas España = Spanish National Research Council Spain (CSIC)-Centro Nacional de Microelectronica Spain (CNM) ; Helmholtz-Zentrum Dresden-Rossendorf (HZDR) ; Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) ; Direction de Recherche Technologique (CEA) (DRT (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) ; Département Plate-Forme Technologique (DPFT) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)) ; Biomedical Applications Group IMB Barcelona ; Consejo Superior de Investigaciones Cientificas España = Spanish National Research Council Spain (CSIC)-Centro Nacional de Microelectronica Spain (CNM)-Consejo Superior de Investigaciones Cientificas España = Spanish National Research Council Spain (CSIC)-Centro Nacional de Microelectronica Spain (CNM) ; Fraunhofer Institute for Integrated Systems and Device Technology (Fraunhofer IISB) ; (Fraunhofer-Gesellschaft), Fraunhofer ; Centro Nacional de Microelectronica Spain (CNM) ; European Project: 688072,H2020,H2020-ICT-2015,IONS4SET(2016) |
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| Zeitschrift: | ISSN: 0268-1242, 2022 |
| Veröffentlichung: | HAL CCSD ; IOP Publishing, 2022 |
| Medientyp: | academicJournal |
| DOI: | 10.1088/1361-6641/ac9f61 |
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