AlInGaAs MQW laser layerstacks for the InP generic integration platform
In: oai:zenodo.org:7629160; (2023)
report
Zugriff:
We designed a series of AlInGaAs MQW laser layerstacks in order to investigate the influence of various design parameters (such as amount of quantum wells, doping strategy, SCH profile) on the laser performance. The stacks are experimentally evaluated by fabricating and testing Broad Area Lasers. Their design is optimized for automated measurement and rapid prototyping allowing for collecting large amounts of data. This enables statistically significant comparison between various Al-based layerstacks and with an InGaAsP reference layerstack (currently used in Smart Photonics generic platform), making the comparisons more reliable than in the existing literature. The Al-based MQW lasers show significantly improved performance, at 70 °C, paving the way towards adoption of AlInGaAs gain section in Smart Photonics generic integration technology enabling better high temperature performance.
Titel: |
AlInGaAs MQW laser layerstacks for the InP generic integration platform
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Autor/in / Beteiligte Person: | Zyskowski, Marcin ; Kleijn, Steven ; Diaz-Otero, Francisco J. ; Augustin, Luc |
Link: | |
Quelle: | oai:zenodo.org:7629160; (2023) |
Veröffentlichung: | 2023 |
Medientyp: | report |
DOI: | 10.36227/techrxiv.21724301.v1 |
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