Performance Improvement versus CPW and Loss Distribution Analysis of Slow-wave CPW in 65 nm HR-SOI CMOS Technology
In: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-01025022 ; IEEE Transactions on Electron Devices, 2013, 59 (5), pp.1279-1285. ⟨10.1109/TED.2012.2186969⟩, 2013
academicJournal
Zugriff:
International audience ; High-performance integrated slow-wave coplanar waveguides (S-CPW) are compared with conventional coplanar waveguides (CPW) fabricated in a 65-nm High-Resistivity-SOI (HR-SOI) CMOS technology. As expected, S-CPW demonstrates better performance at millimeter-wave frequencies in term of higher effective dielectric permittivity, which is due to the patterned floating shield inserted between the transmission line and the substrate. In addition, S-CPW shows a lower attenuation constant despite of the added metallic patterned floating shield on HR substrate. For demonstration purpose, both low- and high- characteristic impedance S-CPW and CPW are characterized. For 28-Ω S-CPW and 65-Ω S-CPW, the effective dielectric permittivity is improved by a factor of 6 and 2, respectively. Meanwhile, attenuation constants of slow-wave structures are lower than 0.9 dB/mm and 0.57 dB/mm at 60 GHz, compared to CPW ones which are as high as 1.5 dB/mm and 0.95 dB/mm, respectively. Furthermore, the loss distribution for the S-CPW structure is detailed by varying the patterned floating shield length for both standard Bulk and HR-SOI substrates.
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Performance Improvement versus CPW and Loss Distribution Analysis of Slow-wave CPW in 65 nm HR-SOI CMOS Technology
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Autor/in / Beteiligte Person: | Tang, Xiaolan ; Franc, Anne-Laure ; Pistono, Emmanuel ; Siligaris, A. ; Vincent, P. ; Ferrari, P. ; Fournier, J. M. ; Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS) ; Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) ; Direction de Recherche Technologique (CEA) (DRT (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) ; Laboratoire de Physique Nucléaire et de Hautes Énergies (LPNHE) ; Université Pierre et Marie Curie - Paris 6 (UPMC)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris Diderot - Paris 7 (UPD7)-Centre National de la Recherche Scientifique (CNRS) |
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Zeitschrift: | ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-01025022 ; IEEE Transactions on Electron Devices, 2013, 59 (5), pp.1279-1285. ⟨10.1109/TED.2012.2186969⟩, 2013 |
Veröffentlichung: | HAL CCSD ; Institute of Electrical and Electronics Engineers, 2013 |
Medientyp: | academicJournal |
DOI: | 10.1109/TED.2012.2186969 |
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