Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor
In: ISSN: 0956-5663 ; Biosensors and Bioelectronics ; https://hal.science/hal-00787263 ; Biosensors and Bioelectronics, 2013, 40 (1), pp.141-146. ⟨10.1016/j.bios.2012.07.001⟩, 2013
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Zugriff:
International audience ; Currently, detection of DNA hybridization using fluorescence-based detection technique requires expensive optical systems and complex bioinformatics tools. Hence, the development of new low cost devices that enable direct and highly sensitive detection stimulates a lot of research efforts. Particularly, devices based on silicon nanowires are emerging as ultrasensitive electrical sensors for the direct detection of biological species thanks to their high surface to volume ratio. In this study, we propose innovative devices using step-gate polycrystalline silicon nanowire FET (poly-Si NW FETs), fabricated with simple and low cost fabrication process, and used as ultrasensitive electronic sensor for DNA hybridization. The poly-SiNWs are synthesized using the sidewall spacer formation technique. The detailed fabrication procedure for a step-gate NWFET sensor is described in this paper. No-complementary and complementary DNA sequences were clearly discriminated and detection limit to 1fM range is observed. This first result using this nano-device is promising for the development of low cost and ultrasensitive polysilicon nanowires based DNA sensors compatible with the CMOS technology.
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Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor
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Autor/in / Beteiligte Person: | Godem-Wenga, Gertrude ; Jacques, Emmanuel ; Salaün, Anne-Claire ; Rogel, Régis ; Pichon, Laurent ; Geneste, Florence ; Institut d'Electronique et de Télécommunications de Rennes (IETR) ; Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes) ; Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS) ; Institut d'Électronique et des Technologies du numéRique (IETR) ; Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes) ; Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS) ; Institut des Sciences Chimiques de Rennes (ISCR) ; Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS) |
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Zeitschrift: | ISSN: 0956-5663 ; Biosensors and Bioelectronics ; https://hal.science/hal-00787263 ; Biosensors and Bioelectronics, 2013, 40 (1), pp.141-146. ⟨10.1016/j.bios.2012.07.001⟩, 2013 |
Veröffentlichung: | HAL CCSD ; Elsevier, 2013 |
Medientyp: | academicJournal |
DOI: | 10.1016/j.bios.2012.07.001 |
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