Ferroelectric and piezoelectric properties of bismuth titanate thin films grown on different bottom electrodes by soft chemical solution and microwave annealing
In: Materials Research Bulletin; 2.873; 0,746; Materials Research Bulletin. Oxford: Pergamon-Elsevier B.V., v. 42, 2007, S. 975-981
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Zugriff:
Bismuth titanate (Bi4Ti3O12, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO3/SiO2/Si (1 0 0) (LNO), RuO2/SiO2/Si (1 0 0) (RuO2) and Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 degrees C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d(33), regardless of bottom electrode is around (similar to 40 pm/V), those over RuO2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 mu C/cm(2)), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices. (c) 2006 Elsevier Ltd. All rights reserved.
| Titel: |
Ferroelectric and piezoelectric properties of bismuth titanate thin films grown on different bottom electrodes by soft chemical solution and microwave annealing
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| Autor/in / Beteiligte Person: | Simoes, A. Z. ; Cruz, M. P. ; Ries, A. ; Longo, Elson ; Varela, José Arana ; Ramesh, R. ; Universidade Estadual Paulista (UNESP) |
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| Zeitschrift: | Materials Research Bulletin; 2.873; 0,746; Materials Research Bulletin. Oxford: Pergamon-Elsevier B.V., v. 42, 2007, S. 975-981 |
| Veröffentlichung: | Elsevier B.V., 2007 |
| Medientyp: | academicJournal |
| ISSN: | 0025-5408 (print) |
| DOI: | 10.1016/j.materresbull.2006.08.006 |
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