Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
In: Scientific Reports, Jg. 11 (2021), Heft 1, S. 1-9
Online
academicJournal
Zugriff:
The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi2Sr2CaCu2O8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and photoemission spectroscopies, and measurements of electrical resistance as a function of temperature. In this study, we develop one useful method to elucidate the electrical phases in vdW layered materials: indium (In)-contacted vdW tunneling spectroscopy for 1T-TaS2, Bi-2212 and 2H-MoS2. We utilized the vdW gap formed at an In/vdW material interface as a tunnel barrier for tunneling spectroscopy. For strongly correlated electron systems such as 1T-TaS2 and Bi-2212, pronounced gap features corresponding to the Mott and superconducting gaps were respectively observed at T = 4 K. We observed a gate dependence of the amplitude of the superconducting gap, which has potential applications in a gate-tunable superconducting device with a SiO2/Si substrate. For In/10 nm-thick 2H-MoS2 devices, differential conductance shoulders at bias voltages of approximately ± 0.45 V were observed, which were attributed to the semiconducting gap. These results show that In-contacted vdW gap tunneling spectroscopy in a fashion of field-effect transistor provides feasible and reliable ways to investigate electronic structures of vdW materials.
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Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials
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Autor/in / Beteiligte Person: | Choi, Dong-Hwan ; Min, Kyung-Ah ; Hong, Suklyun ; Kim, Bum-Kyu ; Bae, Myung-Ho ; Kim, Ju-Jin |
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Zeitschrift: | Scientific Reports, Jg. 11 (2021), Heft 1, S. 1-9 |
Veröffentlichung: | Nature Portfolio, 2021 |
Medientyp: | academicJournal |
ISSN: | 2045-2322 (print) |
DOI: | 10.1038/s41598-021-97110-z |
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