Low power highly linear temperature sensor based on SOI lateral PIN diodes
2016
Online
Konferenz
Zugriff:
This work presents a highly linear temperature sensors implemented with SOI Lateral PIN Diodes, for low-power applications, biased on the exponential region of the I-V characteristics. Experimental results are shown for temperatures ranging between 150 K and 400 K, showing that depending on the selected bias currents, the linearity can be improved in comparison to a single SOI PIN diode. Simulations results show that the sensing range can be extended for both lower and higher temperatures maintaining high linearity.
Titel: |
Low power highly linear temperature sensor based on SOI lateral PIN diodes
|
---|---|
Autor/in / Beteiligte Person: | de Souza, Michelly ; Pavanello, Marcelo Antonio ; Flandre, Denis ; 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ; UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
Link: | |
Veröffentlichung: | 2016 |
Medientyp: | Konferenz |
DOI: | 10.1109/S3S.2016.7804382 |
Schlagwort: |
|
Sonstiges: |
|