Parallel Amplifiers Technique for LNA Design
In: Fifth Sino-French Workshop on Information and Communication Technologies (SIFWICT 2019) ; https://hal.archives-ouvertes.fr/hal-02167087 ; Fifth Sino-French Workshop on Information and Communication Technologies (SIFWICT 2019), Jun 2019, Nantes, France, 2019
Online
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Zugriff:
International audience ; A new design method for low noise amplifier (LNA)based on using parallel amplifiers to improve the linearityand output power is proposed in this paper. Noise parametersincluding minimum noise figure (NFmin) and optimum noiseimpedance (Zsopt) and Rn (sensitivity coefficient) of this topologyare calculated. The effect of parallel path to overall noise figure(NF) and input matching is also considered. Electro magnetic(EM) simulation result for the designed 10-12 GHz LNA with the0.1-m pseudomorphic GaAs HEMT model is reported to supportproposed theories.
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Parallel Amplifiers Technique for LNA Design
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Autor/in / Beteiligte Person: | Sabzi, Masoumeh ; Kamarei, Mahmoud ; Razban, Tchanguiz ; Mahé, Yann ; Institut d'Électronique et des Technologies du numéRique (IETR) ; Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST) ; Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Institut National des Sciences Appliquées - Rennes (INSA Rennes) ; Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1) ; Université de Rennes (UNIV-RENNES) ; University of Teheran |
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Zeitschrift: | Fifth Sino-French Workshop on Information and Communication Technologies (SIFWICT 2019) ; https://hal.archives-ouvertes.fr/hal-02167087 ; Fifth Sino-French Workshop on Information and Communication Technologies (SIFWICT 2019), Jun 2019, Nantes, France, 2019 |
Veröffentlichung: | HAL CCSD, 2019 |
Medientyp: | Konferenz |
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