Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS
In: ISSN: 0026-2714 ; Microelectronics Reliability ; https://hal-emse.ccsd.cnrs.fr/emse-01094805 ; Microelectronics Reliability, Elsevier, 2014, 54 (9-10), pp.2289-2294. ⟨10.1016/j.microrel.2014.07.151⟩, 2014
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Zugriff:
International audience ; Bulk Built-In Current Sensors (bbicss) were introduced to detect the anomalous transient currents induced in the bulk of integrated circuits when hit by ionizing particles. To date, the experimental testing of only one bbics architecture was reported in the scientific bibliography. It reports an unexpected weakness in its ability to monitor nmos transistors. Based on experimental measures, we propose an explanation of this weakness and also the use of triple-well cmos to offset it. Further, we introduce a new bbics architecture well suited for triple-well that offers high detection sensitivity and low area overhead.
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Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS
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| Autor/in / Beteiligte Person: | Dutertre, Jean-Max ; Possamai Bastos, Rodrigo ; Potin, Olivier ; Flottes, Marie-Lise ; Rouzeyre, Bruno ; Di Natale, Giorgio ; Sarafianos, Alexandre ; Département Systèmes et Architectures Sécurisés (SAS-ENSMSE) ; École des Mines de Saint-Étienne (Mines Saint-Étienne MSE) ; Institut Mines-Télécom Paris (IMT)-Institut Mines-Télécom Paris (IMT)-CMP-GC ; Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA) ; Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS) ; (TEST), TEST ; Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM) ; Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM) ; STMicroelectronics |
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| Zeitschrift: | ISSN: 0026-2714 ; Microelectronics Reliability ; https://hal-emse.ccsd.cnrs.fr/emse-01094805 ; Microelectronics Reliability, Elsevier, 2014, 54 (9-10), pp.2289-2294. ⟨10.1016/j.microrel.2014.07.151⟩, 2014 |
| Veröffentlichung: | HAL CCSD ; Elsevier, 2014 |
| Medientyp: | academicJournal |
| DOI: | 10.1016/j.microrel.2014.07.151 |
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