3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology
In: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ; https://shs.hal.science/halshs-03515486 ; 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.301-304, ⟨10.1109/SISPAD54002.2021.9592555⟩, 2021
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Zugriff:
International audience ; In this article, a 3D electro-optical simulation method is presented in order to estimate the Photon Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD). The efficiency of the proposed simulation flow is demonstrated through a complete study aimed at improving the PDP of a SPAD implemented in 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) CMOS technology using a light-trapping approach (thanks to the patterning of Shallow Trench Insolation-STI layer). Simulation shows an increase of PDP spectrum of over 50% at wavelengths of 400-550nm and 750-1000nm and of 10-15% at the wavelengths of 550-750nm, compared to a reference SPAD without any nanostructuration.
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3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology
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| Autor/in / Beteiligte Person: | Gao, S. ; Issartel, D. ; Orobtchouk, R. ; Mandorlo, F. ; Golanski, D. ; Cathelin, A. ; Calmon, F. ; Department of Applied Physics Gothenburg ; Chalmers University of Technology Göteborg ; INL - Dispositifs Electroniques (INL - DE) ; Institut des Nanotechnologies de Lyon (INL) ; École Centrale de Lyon (ECL) ; Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL) ; Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon) ; Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL) ; Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) ; Laboratoire de physique de la matière (LPM) ; Institut National des Sciences Appliquées de Lyon (INSA Lyon) ; Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) ; INL - Photovoltaïque (INL - PV) ; STMicroelectronics Crolles (ST-CROLLES) ; ANR-18-CE24-0010,SPAD-FDSOI,Intégration monolithique de SPAD dans une technologie CMOS FDSOI(2018) |
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| Zeitschrift: | 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ; https://shs.hal.science/halshs-03515486 ; 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.301-304, ⟨10.1109/SISPAD54002.2021.9592555⟩, 2021 |
| Veröffentlichung: | HAL CCSD ; IEEE, 2021 |
| Medientyp: | Konferenz |
| DOI: | 10.1109/SISPAD54002.2021.9592555 |
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