Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence
In: Applied Physics Letters, 2015
Online
academicJournal
Zugriff:
The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90–363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data from Trupke et al. [J. Appl. Phys. 94, 4930 (2003).] We present a polynomial parameterization describing the temperature dependence of the product of B(T) and the square of the intrinsic carrier density. We also find that B(T) saturates at a near constant value at room temperature and above for silicon samples with relatively low free carrier densities.
Titel: |
Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence
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Autor/in / Beteiligte Person: | Nguyen, Hieu T ; Baker-Finch, Simeon ; Macdonald, Daniel |
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Zeitschrift: | Applied Physics Letters, 2015 |
Veröffentlichung: | American Institute of Physics, 2015 |
Medientyp: | academicJournal |
ISSN: | 0003-6951 (print) |
DOI: | 10.1063/1.4869295 |
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