Photoelectric properties and persistent photoconductivity of GaN-based ultraviolet photodetectors
In: Journal of Physics: Conference Series, Jg. 2563 (2023), Heft 1, S. 012032
academicJournal
Zugriff:
Persistent photoconductivity deeply affects the performance of the photodetector, and has been studied in a variety of semiconductor optoelectronic devices. In this work, AlGaN/GaN metal-heterojunction-metal (MHM) ultraviolet (UV) detectors and GaN metal-semiconductor-metal (MSM) ultraviolet detectors were prepared using transverse Schottky contacts, and characterized at different temperatures, light intensity and bias voltage. The two-dimensional electron gas (2-DEG) at the Schottky heterojunction of AlGaN and GaN is used to generate high-speed electron mobility, which significantly improves the response speed and responsivity of photogenerated carriers. Under the illumination of 365 nm center ultraviolet light with an intensity of 4.4 mW/cm 2 , the photocurrent can reach 434 μA-MHM and 38 μA-MSM (25 °C), and the attenuation rate increase by 2.8 times, 5 times and 3.7 times with temperature (25 °C-250 °C), bias voltage (5/10/15 V), and light intensity (0.33/1.1/4.4 mW/cm 2 ), respectively, and the attenuation rate reaches 50∼80 times.
Titel: |
Photoelectric properties and persistent photoconductivity of GaN-based ultraviolet photodetectors
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Autor/in / Beteiligte Person: | Yue, Zhongyu |
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Zeitschrift: | Journal of Physics: Conference Series, Jg. 2563 (2023), Heft 1, S. 012032 |
Veröffentlichung: | IOP Publishing, 2023 |
Medientyp: | academicJournal |
ISSN: | 1742-6588 |
DOI: | 10.1088/1742-6596/2563/1/012032 |
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