Scanning microwave microscopy of buried CMOS interconnect lines with nanometer resolution
In: International Journal of Microwave and Wireless Technologies, Jg. 10 (2018), Heft 5-6, S. 556-561
academicJournal
Zugriff:
This paper reports scanning microwave microscopy of CMOS interconnect aluminum lines both bare and buried under oxide. In both cases, a spatial resolution of 190 ± 70 nm was achieved, which was comparable or better than what had been reported in the literature. With the lines immersed in water to simulate high- k dielectric, the signal-to-noise ratio degraded significantly, but the image remained as sharp as before, especially after averaging across a few adjacent scans. These results imply that scanning microwave microscopy can be a promising technique for non-destructive nano-characterization of both CMOS interconnects buried under oxide and live biological samples immersed in water.
Titel: |
Scanning microwave microscopy of buried CMOS interconnect lines with nanometer resolution
|
---|---|
Autor/in / Beteiligte Person: | Jin, Xin ; Xiong, Kuanchen ; Marstell, Roderick ; Strandwitz, Nicholas C. ; Hwang, James C. M. ; Farina, Marco ; Göritz, Alexander ; Wietstruck, Matthias ; Kaynak, Mehmet |
Link: | |
Zeitschrift: | International Journal of Microwave and Wireless Technologies, Jg. 10 (2018), Heft 5-6, S. 556-561 |
Veröffentlichung: | Cambridge University Press (CUP), 2018 |
Medientyp: | academicJournal |
ISSN: | 1759-0787 |
DOI: | 10.1017/s1759078718000181 |
Schlagwort: |
|
Sonstiges: |
|