Measurement of UKRI-MPW0 after irradiation: an HV-CMOS prototype for high radiation tolerance
In: Journal of Instrumentation, Jg. 19 (2024), Heft 03, S. C03061
academicJournal
Zugriff:
UKRI-MPW0 was developed to further improve the radiation tolerance of HV-CMOS pixel sensors. It implements a novel sensor cross-section that uses backside-only biasing to allow high substrate bias voltages > 600 V. In this contribution, the measured results of irradiated UKRI-MPW0 samples are presented, including their current-to-voltage (I-V) characteristics, depletion depth and pixel performance. The chip is proved to have survived high radiation fluence of 3 × 10 15 n eq /cm 2 .
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Measurement of UKRI-MPW0 after irradiation: an HV-CMOS prototype for high radiation tolerance
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Autor/in / Beteiligte Person: | Zhang, C. ; Hammerich, J. ; Powell, S. ; Vilella, E. ; Wade, B. |
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Zeitschrift: | Journal of Instrumentation, Jg. 19 (2024), Heft 03, S. C03061 |
Veröffentlichung: | IOP Publishing, 2024 |
Medientyp: | academicJournal |
ISSN: | 1748-0221 |
DOI: | 10.1088/1748-0221/19/03/c03061 |
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