Above 15% Efficient Directly Sputtered CIGS Solar Cells Enabled by a Modified Back-Contact Interface
2021
academicJournal
Zugriff:
The Schottky back-contact barrier at the Mo/Cu(In,Ga)Se 2 (CIGS) interface is one of the critical issues that restrict the photovoltaic performance of CIGS solar cells. The formation of a MoSe 2 intermediate layer can effectively reduce this back-contact barrier leading to efficient hole transport. However, the selenium-free atmosphere is unfavorable for the formation of the desired MoSe 2 intermediate layer if the CIGS films are prepared by the commonly used direct sputtering process. In this work, high-efficiency CIGS solar cells with a MoSe 2 intermediate layer were fabricated by the direct sputtering process without a selenium atmosphere. This is enabled by an intermediate CIGS layer deposited on the Mo substrate at room temperature before being ramped to a high temperature (600 °C). The room-temperature-deposited amorphous CIGS intermediate layer is Se rich, which reacts with the Mo substrate and forms very thin MoSe 2 at the interface during the high-temperature process. The formed MoSe 2 decreased the CIGS/Mo barrier height for better hole transport. Consequently, the CIGS solar cell with an 80 nm intermediate layer achieved a power conversion efficiency of up to 15.8%, which is a benchmark efficiency for the direct sputtering process without Se supply. This work provides the industry a new approach for commercialization of directly sputtered CIGS solar cells.
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Above 15% Efficient Directly Sputtered CIGS Solar Cells Enabled by a Modified Back-Contact Interface
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Autor/in / Beteiligte Person: | Wanlei Dai (11532893) ; Zeran Gao (11532896) ; Jianjun Li (139837) ; Shumin Qin (11187192) ; Ruobing Wang (155810) ; Haoyu Xu (1706962) ; Xinzhan Wang (11532899) ; Chao Gao (154531) ; Xiaoyun Teng (11532902) ; Yu Zhang (12946) ; Xiaojing Hao (1366272) ; Yinglong Wang (1449796) ; Wei Yu (43094) |
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Veröffentlichung: | 2021 |
Medientyp: | academicJournal |
DOI: | 10.1021/acsami.1c11493.s001 |
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