The Photovoltaic Cell Based on CIGS: Principles and Technologies
In: Materials, Vol 15, Iss 1908, p 1908 (2022, Jg. 15 (2022), Heft 1908, p 1908
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Zugriff:
Semiconductors used in the manufacture of solar cells are the subject of extensive research. Currently, silicon is the most commonly used material for photovoltaic cells, representing more than 80% of the global production. However, due to its very energy-intensive and costly production method, other materials appear to be preferable over silicon, including the chalcopyrite-structured semiconductors of the CIS-based family (Cu(In, Ga, Al) (Se, S) 2 ). Indeed, these compounds have bandwidths between 1 eV (CuInSe 2 ) and 3 eV (CuAlS 2 ), allowing them to absorb most solar radiation. Moreover, these materials are currently the ones that make it possible to achieve the highest photovoltaic conversion efficiencies from thin-film devices, particularly Cu(In, Ga)Se 2 , which is considered the most efficient among all drifts based on CIS. In this review, we focus on the CIGS-based solar cells by exploring the different layers and showing the recent progress and challenges.
Titel: |
The Photovoltaic Cell Based on CIGS: Principles and Technologies
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Autor/in / Beteiligte Person: | Salhi, Billel |
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Zeitschrift: | Materials, Vol 15, Iss 1908, p 1908 (2022, Jg. 15 (2022), Heft 1908, p 1908 |
Veröffentlichung: | MDPI AG, 2022 |
Medientyp: | academicJournal |
ISSN: | 1996-1944 (print) |
DOI: | 10.3390/ma15051908 |
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