Analysis of Airgaps for Off State Capacitance Reduction in SOI CMOS RF Switches
In: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-04192324 ; IEEE Transactions on Electron Devices, In press, ⟨10.1109/TED.2023.3311415⟩, 2023
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Zugriff:
International audience ; This article analyses the introduction of airgaps in the interconnect network of SOI-CMOS based RF switches to significantly reduce the off-state capacitance COFF without degrading the on-state resistance RON. Based on the 130 nm node of an existing RF-SOI-CMOS technology, an accurate COFF evaluation is performed by calculating the respective contributions of the interconnects and the intrinsic transistor separately. The impact of the relative airgap volume is simulated and results in an ultimate COFF reduction of 24.6% when the intermetal dielectric is completely replaced by air. It is shown that most of the reduction in COFF is achieved by introducing airgap at the first metal level. The airgap approach is verified experimentally by partially eliminating the interconnect dielectric of RF switches in post-process etching steps. A measured COFF improvement of 21.7 fF/mm (7.2%) and 18.3 fF/mm (6.3%) is demonstrated for 0.14 and 0.16 µm gate length transistors for which the airgap volume is only partial.
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Analysis of Airgaps for Off State Capacitance Reduction in SOI CMOS RF Switches
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Autor/in / Beteiligte Person: | Gheysens, Daniel ; Fleury, Alain ; Monfray, Stephane ; Gianesello, Frederic ; Cathelin, Philippe ; Troadec, David ; Robillard, Jean-François ; Dubois, Emmanuel ; STMicroelectronics Crolles (ST-CROLLES) ; STMicroelectronics ; Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; Université catholique de Lille (UCL)-Université catholique de Lille (UCL) ; Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN) ; Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) ; Microélectronique Silicium - IEMN (MICROELEC SI - IEMN) ; (JUNIA), JUNIA ; Université catholique de Lille (UCL) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) ; This work was supported by: i) the STMicroelectronics-IEMN joint laboratory ii) the French government through the National Research Agency (ANR) under program PIA EQUIPEX LEAF ANR-11-EQPX-0025 and iii) the French RENATECH network on micro and nanotechnologies ; Network, Renatech ; CMNF ; Laboratoire commun STMicroelectronics-IEMN T4 ; ANR-11-EQPX-0025,LEAF,Plateforme de traitement laser pour l'électronique flexible multifonctionnelle(2011) |
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Zeitschrift: | ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-04192324 ; IEEE Transactions on Electron Devices, In press, ⟨10.1109/TED.2023.3311415⟩, 2023 |
Veröffentlichung: | HAL CCSD ; Institute of Electrical and Electronics Engineers, 2023 |
Medientyp: | academicJournal |
DOI: | 10.1109/TED.2023.3311415 |
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