Reliability compact modeling approach for layout dependent effects in advanced CMOS nodes
In: 2017 IEEE International Reliability Physics Symposium (IRPS) ; https://hal.science/hal-03654474 ; 2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, France. pp.4C-4.1-4C-4.7, ⟨10.1109/IRPS.2017.7936315⟩, 2017
Konferenz
Zugriff:
International audience ; In this paper, we have analysed and modelled the layout dependent effects (LDE) found in pMOSFET transistors from 14nm UTBB FDSOI CMOS technology. Experiments show that changing the layout has a clear impact on threshold Voltage (V th ), under NBTI reliability and on Ring Oscillator (RO) Frequency drift. Compact models taking account the impact of LDE on V th , NBTI reliability, and on RO frequency are proposed. Measurement data are fitted with a new compact model showing that the obtained results are in very good agreements with the modelling.
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Reliability compact modeling approach for layout dependent effects in advanced CMOS nodes
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Autor/in / Beteiligte Person: | Ndiaye, C. ; Berthelon, R. ; Huard, V. ; Bravaix, Alain ; Diouf, C. ; Andrieu, F. ; Ortolland, S. ; Rafik, M. ; Lajmi, R. ; Federspiel, X. ; Cacho, F. ; Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP) ; Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) ; STMicroelectronics Crolles (ST-CROLLES) ; Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) ; Direction de Recherche Technologique (CEA) (DRT (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA) ; Méditerrané, Yncréa |
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Zeitschrift: | 2017 IEEE International Reliability Physics Symposium (IRPS) ; https://hal.science/hal-03654474 ; 2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, France. pp.4C-4.1-4C-4.7, ⟨10.1109/IRPS.2017.7936315⟩, 2017 |
Veröffentlichung: | HAL CCSD ; IEEE, 2017 |
Medientyp: | Konferenz |
DOI: | 10.1109/IRPS.2017.7936315 |
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