A 0.7 V, Ultra-Wideband Common Gate LNA with Feedback Body Bias Topology for Wireless Applications
In: Journal of Low Power Electronics and Applications, Vol 8, Iss 4, Jg. 8 (2018), Heft 4, p 42
Online
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Zugriff:
An ultra-wideband (UWB) low noise amplifier (LNA) for 3.3⁻13.0 GHz wireless applications using 90 nm CMOS is proposed in this paper. The proposed LNA uses an improved common-gate (CG) topology utilizing feedback body biasing (FBB), which improves noise figure (NF) by a considerable amount. Parallel-series tuned LC network was used between the common-gate first stage and the cascoded common-source (CS) stage to achieve the maximum signal flow from CG to CS stage. Improved CS topology with a series inductor at the drain terminal in the second stage connected and cascoded CS third stage provides high power gain ( S 21 ) and bandwidth enhancement throughout the complete UWB. A common-drain buffer stage at the output provides high output reflection coefficient ( S 22 ). It achieves an average power gain ( S 21 ) of 14.7 ± 0.5 dB with a noise figure ( NF ) of 3.0⁻3.7 dB. It has an input reflection coefficient ( S 11 ) less than −11.7 dB for 3.3⁻13.0 GHz frequency and output reflection coefficient ( S 22 ) of less than −10.6 dB with a very high reversion isolation ( S 12 ) of less than −72.4 dB. It consumes only 5.2 mW from a 0.7 V power supply.
Titel: |
A 0.7 V, Ultra-Wideband Common Gate LNA with Feedback Body Bias Topology for Wireless Applications
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Autor/in / Beteiligte Person: | Singh, Vikram ; Arya, Sandeep K. ; Kumar, Manoj |
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Zeitschrift: | Journal of Low Power Electronics and Applications, Vol 8, Iss 4, Jg. 8 (2018), Heft 4, p 42 |
Veröffentlichung: | MDPI AG, 2018 |
Medientyp: | academicJournal |
ISSN: | 2079-9268 (print) |
DOI: | 10.3390/jlpea8040042 |
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