Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells
In: SPIE Photonics Europe, ; https://hal.science/hal-01326155 ; SPIE Photonics Europe,, Apr 2016, Bruxelles, Belgium, 2016
Online
Konferenz
Zugriff:
International audience ; Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells (CQW) grown on Si have been investigated by means of optical transmission measurements. The separate confinement of electrons and holes in the heterostructure gives rise to an anomalous Quantum Confined Stark Effect (QCSE) that can be exploited to strongly enhance the electro-refractive effect with respect to uncoupled quantum wells. A refractive index variation up to 2.3 x 10-3 has been measured at 1.5 V, with an VπLπ of 0.046 V cm. This result is very promising for the realization of an efficient and compact phase modulator based on the Ge/SiGe material system.
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Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells
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| Autor/in / Beteiligte Person: | Frigerio, Jacopo ; Vakarin, Vladylav ; Chaisakul, Papichaya ; Ballabio, Andrea ; Chrastina, Daniel ; Le Roux, Xavier ; Vivien, Laurent ; Isella, Giovanni ; Marris-Morini, Delphine ; Politecnico di Milano Milan (POLIMI) ; Institut d'électronique fondamentale (IEF) ; Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS) ; European Project: 639107,H2020,ERC-2014-STG,INsPIRE(2015) |
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| Zeitschrift: | SPIE Photonics Europe, ; https://hal.science/hal-01326155 ; SPIE Photonics Europe,, Apr 2016, Bruxelles, Belgium, 2016 |
| Veröffentlichung: | HAL CCSD, 2016 |
| Medientyp: | Konferenz |
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