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LNAs Lower Noise In Wireless Base Stations; This pair of GaAs pHEMT-based low-noise amplifiers feature internal active bias circuitry for stable performance and high linearity in wireless infrastructure applications through 3 GHz.
In: Microwaves & RF, Jg. 50 (2011-04-01), Heft 4
Online
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Titel: |
LNAs Lower Noise In Wireless Base Stations; This pair of GaAs pHEMT-based low-noise amplifiers feature internal active bias circuitry for stable performance and high linearity in wireless infrastructure applications through 3 GHz.
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Zeitschrift: | Microwaves & RF, Jg. 50 (2011-04-01), Heft 4 |
Veröffentlichung: | 2011 |
Medientyp: | serialPeriodical |
ISSN: | 0745-2993 (print) |
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