Patent Issued for CMOS finFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same (USPTO 11682589).
In: Technology Business Journal, 2023-07-11, S. 2028
Zeitungsartikel
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Titel: |
Patent Issued for CMOS finFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same (USPTO 11682589).
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Zeitschrift: | Technology Business Journal, 2023-07-11, S. 2028 |
Veröffentlichung: | 2023 |
Medientyp: | Zeitungsartikel |
ISSN: | 1945-8398 (print) |
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