Gallium incorporation kinetics during gas-source molecular beam epitaxy growth of GaN : III-V nitrides
In: SOLID STATE ELECTRONICS 41(2):339-344; Jg. 41Nr. 2, S. 339-344
Konferenz
Zugriff:
Titel: |
Gallium incorporation kinetics during gas-source molecular beam epitaxy growth of GaN : III-V nitrides
|
---|---|
Autor/in / Beteiligte Person: | Evans, K. R. ; Lei, T. ; Jones, C. R. |
Link: | |
Quelle: | SOLID STATE ELECTRONICS 41(2):339-344; Jg. 41Nr. 2, S. 339-344 |
Medientyp: | Konferenz |
ISSN: | 0038-1101 (print) |
Sonstiges: |
|