Stacking mismatch boundaries in GaN: implications for substrate selection : III-V nitrides
In: SOLID STATE ELECTRONICS 41(2):349-352; Jg. 41Nr. 2, S. 349-352
Konferenz
Zugriff:
Titel: |
Stacking mismatch boundaries in GaN: implications for substrate selection : III-V nitrides
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Autor/in / Beteiligte Person: | Smith, D. J. ; Tsen, S.-C. Y. ; Sverdlov, B. N. ; Martin, G. |
Link: | |
Quelle: | SOLID STATE ELECTRONICS 41(2):349-352; Jg. 41Nr. 2, S. 349-352 |
Medientyp: | Konferenz |
ISSN: | 0038-1101 (print) |
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