Extremely uniform InAs/GaAs quantum dots emitting at 1.46 mkm at room temperature grown by MOCVD with Bi doping : Physics of semiconductors
In: SPRINGER PROCEEDINGS IN PHYSICS (1):397-398; (2001) 1, S. 397-398
Konferenz
Zugriff:
Titel: |
Extremely uniform InAs/GaAs quantum dots emitting at 1.46 mkm at room temperature grown by MOCVD with Bi doping : Physics of semiconductors
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Autor/in / Beteiligte Person: | Zvonkov, B. N. ; Karpovich, I. A. ; Baidus, N. V. ; Filatov, D. O. ; Gushina, Y. Y. ; Morozov, S. V. ; Levichev, S. B. |
Link: | |
Quelle: | SPRINGER PROCEEDINGS IN PHYSICS (1):397-398; (2001) 1, S. 397-398 |
Veröffentlichung: | 2001 |
Medientyp: | Konferenz |
ISBN: | 978-3-540-41778-1 (print) ; 3-540-41778-8 (print) |
ISSN: | 0930-8989 (print) |
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