Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si~1~ ~xGe~x CVD : Silicon epitaxy and heterostructures
In: MATERIALS SCIENCE AND ENGINEERING B89(NO 1-3):120-124; Jg. B89 (2002) NO 1-3, S. 120-124
Konferenz
Zugriff:
Titel: |
Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si~1~ ~xGe~x CVD : Silicon epitaxy and heterostructures
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Autor/in / Beteiligte Person: | Yamashiro, T. ; Kikuchi, T. ; Ishii, M. ; Honma, F. ; Sakuraba, M. |
Link: | |
Quelle: | MATERIALS SCIENCE AND ENGINEERING B89(NO 1-3):120-124; Jg. B89 (2002) NO 1-3, S. 120-124 |
Veröffentlichung: | 2002 |
Medientyp: | Konferenz |
ISSN: | 0921-5107 (print) |
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