Steady-state characterization of partially depleted SOI CMOS gates : Silicon-on-insulator technology and devices
In: PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV; (2003) S. 499-504
Konferenz
Zugriff:
Titel: |
Steady-state characterization of partially depleted SOI CMOS gates : Silicon-on-insulator technology and devices
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Autor/in / Beteiligte Person: | Bracale, A. ; Dupont-Nivet, E. ; Pelloie, J. L. |
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Quelle: | PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV; (2003) S. 499-504 |
Veröffentlichung: | 2003 |
Medientyp: | Konferenz |
ISBN: | 978-1-56677-375-1 (print) ; 1-56677-375-X (print) |
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