Si Channel Surface Dependence of Electrical Characteristics in Ultra-Thin Gate Oxide CMOS : ULSI process integration
In: PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV; (2003) S. 361-374
Konferenz
Zugriff:
Titel: |
Si Channel Surface Dependence of Electrical Characteristics in Ultra-Thin Gate Oxide CMOS : ULSI process integration
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Autor/in / Beteiligte Person: | Momose, H. S. |
Link: | |
Quelle: | PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV; (2003) S. 361-374 |
Veröffentlichung: | 2003 |
Medientyp: | Konferenz |
ISBN: | 978-1-56677-376-8 (print) ; 1-56677-376-8 (print) |
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