Polysilicon CMOS TFTs Inverters with a Gate Silicon Oxide Deposited using PECVD with Hexamethyldisiloxane (HMDSO) : Thin film transistor technologies
In: PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV 2002-23:55-62; Jg. 2002-23 (2003) S. 55-62
Konferenz
Zugriff:
Titel: |
Polysilicon CMOS TFTs Inverters with a Gate Silicon Oxide Deposited using PECVD with Hexamethyldisiloxane (HMDSO) : Thin film transistor technologies
|
---|---|
Autor/in / Beteiligte Person: | Gautier, G. ; Coulon, N. ; Viana, C. E. ; Crand, S. ; Rogel, R. ; Goullet, A. ; Morimoto, N. I. ; Bonnaud, O. |
Link: | |
Quelle: | PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV 2002-23:55-62; Jg. 2002-23 (2003) S. 55-62 |
Veröffentlichung: | 2003 |
Medientyp: | Konferenz |
ISBN: | 978-1-56677-385-0 (print) ; 1-56677-385-7 (print) |
Sonstiges: |
|