Poly-Si gate CMOS with hafnium silicate gate dielectric : Advanced Short-Time Thermal Processing for Si-based CMOS Devices
In: PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV 14:361-366; Jg. 14 (2003) S. 361-366
Konferenz
Zugriff:
Titel: |
Poly-Si gate CMOS with hafnium silicate gate dielectric : Advanced Short-Time Thermal Processing for Si-based CMOS Devices
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Autor/in / Beteiligte Person: | Hobbs, C. ; Grant, J. ; Kher, S. ; Dhandapani, V. ; Taylor, B. ; Dip, L. ; Hegde, R. ; Metzner, C. ; Tseng, H. ; Gilmer, D. |
Link: | |
Quelle: | PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV 14:361-366; Jg. 14 (2003) S. 361-366 |
Veröffentlichung: | 2003 |
Medientyp: | Konferenz |
ISBN: | 978-1-56677-396-6 (print) ; 1-56677-396-2 (print) |
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