Advanced front-end processes for the 45nm CMOS technology node : Material science issues in advanced CMOS source-drain engineering; EMRS 2004, Symposium B: material science issues in advanced CMOS source-drain engineering
In: MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- 114-115:118-129; Jg. 114-115 (2004) S. 118-129
Konferenz
Zugriff:
Titel: |
Advanced front-end processes for the 45nm CMOS technology node : Material science issues in advanced CMOS source-drain engineering; EMRS 2004, Symposium B: material science issues in advanced CMOS source-drain engineering
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Autor/in / Beteiligte Person: | Collart, E. J. ; Felch, S. B. ; Graoui, H. ; Kirkwood, D. ; Tallavarjula, S. ; Berg, J. A. ; Hamilton, J. ; Cowern, N. E. ; Kirkby, K. J. |
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Quelle: | MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- 114-115:118-129; Jg. 114-115 (2004) S. 118-129 |
Veröffentlichung: | 2004 |
Medientyp: | Konferenz |
ISSN: | 0921-5107 (print) |
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