FA-3-2 120^oC Operation of 10Gbps Direct Modulated 1.3mum AlGaInAs-MQW DFB Laser Diodes : 2004 international conference on indium phosphide and related materials: 16th IPRM
In: INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS; (2004) S. 734-737
Konferenz
Zugriff:
Titel: |
FA-3-2 120^oC Operation of 10Gbps Direct Modulated 1.3mum AlGaInAs-MQW DFB Laser Diodes : 2004 international conference on indium phosphide and related materials: 16th IPRM
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Quelle: | INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS; (2004) S. 734-737 |
Veröffentlichung: | 2004 |
Medientyp: | Konferenz |
ISBN: | 978-0-7803-8595-5 (print) ; 0-7803-8595-0 (print) |
ISSN: | 1092-8669 (print) |
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