Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study : International conference on solid state devices and materials
In: SOLID STATE DEVICES AND MATERIALS; (2008) S. 892-893
Konferenz
Zugriff:
Titel: |
Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study : International conference on solid state devices and materials
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Autor/in / Beteiligte Person: | Toriyama, S. ; Matsuzawa, K. ; Sano, N. |
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Quelle: | SOLID STATE DEVICES AND MATERIALS; (2008) S. 892-893 |
Veröffentlichung: | 2008 |
Medientyp: | Konferenz |
ISBN: | 978-4-903968-61-2 (print) ; 4-903968-61-8 (print) |
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